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Contamination of MOS field effect transistors.Positive ion current emission by tungsten and molybdenum studied for influence of impurities on MOSFET transistors
Document ID
19680034512
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Hoenig, S. A.
Date Acquired
August 4, 2013
Publication Date
December 1, 1967
Publication Information
Publisher: ELECTRONIC COMMUNICATOR, VOL. 2, P. 17, 18.
Subject Category
Electronic Equipment
Accession Number
68A15484
Funding Number(s)
CONTRACT_GRANT: NSG-458
Distribution Limits
Public
Copyright
Other

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