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Process techniques and radiation effects in metal insulator semiconductor structures.Interrelation between sensitivity to radiation in MOS devices and gate oxide film processing, considering steam growth and dry oxygen growth oxides
Document ID
19680036263
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Dennehy, W. J.
Holmes-Siedle, A. G.
Zaininger, K. H.
Date Acquired
August 4, 2013
Publication Date
December 1, 1967
Publication Information
Publisher: IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. NS-14, P. 276- 283.
Subject Category
Physics, Solid-State
Meeting Information
Meeting: ANNUAL CONFERENCE ON NUCLEAR AND SPACE RADIATION EFFECTS
Location: COLUMBUS, OH
Start Date: July 10, 1967
End Date: July 14, 1967
Sponsors: INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS
Accession Number
68A17235
Funding Number(s)
CONTRACT_GRANT: NAS5-10177
Distribution Limits
Public
Copyright
Other

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