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Second breakdown of double epitaxial transistors.Second breakdown of transistors with diffused emitter, epitaxial collector and base, obtaining maximum operating current dependence on base width and resistivity
Document ID
19680043136
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ernick, F. G.
Kannam, P. J.
Marino, J.
Date Acquired
August 4, 2013
Publication Date
February 1, 1968
Subject Category
Electronic Equipment
Accession Number
68A24108
Distribution Limits
Public
Copyright
Other

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