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IR analysis of second breakdown modes in power transistors.Power transistor reliability against second breakdown, locating breakdown by IR fast scan microscope and measuring breakdown voltage
Document ID
19680049250
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Dostoomian, A. S.
Nowakowski, M. F.
Date Acquired
August 4, 2013
Publication Date
March 1, 1968
Subject Category
Electronic Equipment
Meeting Information
Meeting: INTERNATIONAL CONVENTION AND EXHIBITION
Location: NEW YORK, NY
Start Date: March 18, 1968
End Date: March 21, 1968
Sponsors: INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS
Accession Number
68A30222
Distribution Limits
Public
Copyright
Other

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