MOSFET operation at 4.2 K.

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N and p channel MOSFET operation at 4.2 K noting noise, AC gain, power dissipation and deterioration under thermal cycling from room temperature

Document ID

19680064694

Acquisition Source

Legacy CDMS

Document Type

Reprint (Version printed in journal)

Authors

Date Acquired

August 4, 2013

Publication Date

October 1, 1968

Subject Category

Accession Number

68A45666

Funding Number(s)

Distribution Limits

Public

Other

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