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Silicon carbide diode for increased light outputTransition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.
Document ID
19690000096
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Griffiths, L. B.
Mlavsky, A. I.
Date Acquired
August 5, 2013
Publication Date
June 1, 1969
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-20063
Report Number: MFS-20063
Accession Number
69B10096
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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