NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electronsElectron irradiation effect on resolution of lithium-drifted silicon semiconductor detectors
Document ID
19690001602
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Technical Note (TN)
Authors
Hendricks, H. D. (NASA Langley Research Center Hampton, VA, United States)
Phillips, D. H. (NASA Langley Research Center Hampton, VA, United States)
Date Acquired
September 2, 2013
Publication Date
November 1, 1968
Subject Category
Instrumentation And Photography
Report/Patent Number
NASA-TN-D-4901
Report Number: NASA-TN-D-4901
Accession Number
69N10933
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available