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Heteroepitaxy of 3-5 compound semiconductors on insulating substrates Interim reportHeteroepitaxial growth of GaAs films on aluminum oxide substrates by trimethylgallium-arsine process
Document ID
19690030994
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Manasevit, H. M. (North American Rockwell Corp. Anaheim, CA, United States)
Thorsen, A. C. (North American Rockwell Corp. Anaheim, CA, United States)
Date Acquired
September 2, 2013
Publication Date
May 1, 1969
Subject Category
Physics, Solid-State
Report/Patent Number
NASA-CR-86258
Report Number: NASA-CR-86258
Accession Number
69N40383
Funding Number(s)
CONTRACT_GRANT: NAS12-2010
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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