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Gallium phosphide devices for use at high temperatures.Schottky barrier diodes for high temperature operation prepared on n type GaP single crystals, studying I-V and C-V characteristics
Document ID
19690057692
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Nannichi, Y.
Pearson, G. L.
Date Acquired
August 5, 2013
Publication Date
January 1, 1968
Publication Information
Publisher: INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS, INC.,
Subject Category
Physics, Solid-State
Meeting Information
Meeting: INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS, PHOTOVOLTAIC SPECIALISTS CONFERENCE
Location: PASADENA, CALIF.
Start Date: November 19, 1968
End Date: November 21, 1968
Sponsors: INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS
Accession Number
69A35681
Funding Number(s)
CONTRACT_GRANT: NSG-555
Distribution Limits
Public
Copyright
Other

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