NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Press Enter or click the Search button to begin your search.

Back to Results
Diffusion technique for lithium-doped siliconSample is doped by constructing a sandwich of five slices of silicon with lithium dopant deposited on the outside surfaces of the second and fourth slices and placing the sample in the middle. Upon heating, the lithium diffuses through the carrier slices and into the sample wafer.
Document ID
19700000142
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Kendall, D. L.
(TEX. INSTR., INC.)
Date Acquired
August 5, 2013
Publication Date
June 1, 1970
Subject Category
Electronic Components And Circuits
Report/Patent Number
Report Number: GSC-10827
GSC-10827
Accession Number
70B10148
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
No Preview Available