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Technique for producing bipolar and MOS field effect transistors on a single chipSeveral cycles of photoetching, dopant deposition, and drive-in produce selectively-doped regions and semiconductor junctions within a single chip.
Document ID
19700000210
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Gallagher, R. C.
(WESTINGHOUSE ELEC. CORP.)
Williams, D. W.
Date Acquired
August 5, 2013
Publication Date
April 1, 1970
Subject Category
Electronic Components And Circuits
Report/Patent Number
MSC-13358
Report Number: MSC-13358
Accession Number
70B10218
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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