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Power semiconductor device with negative thermal feedbackComposite power semiconductor avoids second breakdown and provides stable operation. It consists of an array of parallel-connected integrated circuits fabricated in a single chip. The output power device and associated low-level amplifier are closely coupled thermally, so that they have a predetermined temperature relationship.
Document ID
19700000251
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Borky, J. M. (MIT)
Thornton, R. D.
Date Acquired
August 5, 2013
Publication Date
December 1, 1970
Subject Category
Electronic Components And Circuits
Report/Patent Number
HQN-10577
Report Number: HQN-10577
Accession Number
70B10262
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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