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Growth of single-crystal gallium nitrideUse of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces.
Document ID
19700000456
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Clough, R. (RCA)
Richman, D.
Tietjen, J.
Date Acquired
August 5, 2013
Publication Date
October 1, 1970
Subject Category
Physical Sciences
Report/Patent Number
ERC-10301
Report Number: ERC-10301
Accession Number
70B10473
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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