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New method for photoresist strippingVacuum dehydration of negatively working photoresist eliminates trace contamination of conventional stripping methods. The semiconductor substrate is coated with photoresist, exposed, developed, cured, and etched, and then placed in a vacuum. Following dehydration, the resist film is removable with ordinary solvents.
Document ID
19700000479
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Davern, W. E. (GE)
Tobin, L. S.
Date Acquired
August 5, 2013
Publication Date
September 1, 1970
Subject Category
Materials
Report/Patent Number
ERC-10239
Report Number: ERC-10239
Accession Number
70B10497
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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