NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
P-n junctions formed in gallium antimonideVapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.
Document ID
19700000482
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Clough, R. (RCA)
Richman, D.
Tietjen, J.
Date Acquired
August 5, 2013
Publication Date
November 1, 1970
Subject Category
Electronic Components And Circuits
Report/Patent Number
ERC-10302
Report Number: ERC-10302
Accession Number
70B10500
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available