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Annealing of electron damage in lithium-doped silicon at 300 KAnnealing of electron damage in lithium-doped silicon measured using Hall effect
Document ID
19700002805
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Stannard, J. E. (Naval Research Lab. Washington, DC, United States)
Date Acquired
August 5, 2013
Publication Date
August 15, 1969
Publication Information
Publication: JPL EFFECTS OF LITHIUM DOPING ON SILICON SOLAR CELLS 15 AUG. 1969
Subject Category
Auxiliary Systems
Accession Number
70N12109
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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