NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Due to the lapse in federal government funding, NASA is not updating this website. We sincerely regret this inconvenience.

Back to Results
Production and annealing of defects in Li-diffused silicon after 30-MeV electron irradiation at 300 KProduction and annealing of defects in lithium diffused silicon after electron irradiation
Document ID
19700002806
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Berger, R. A.
(Gulf General Atomic San Diego, CA, United States)
Horiye, H.
(Gulf General Atomic San Diego, CA, United States)
Naber, J. A.
(Gulf General Atomic San Diego, CA, United States)
Date Acquired
August 5, 2013
Publication Date
August 15, 1969
Publication Information
Publication: JPL EFFECTS OF LITHIUM DOPING ON SILICON SOLAR CELLS 15 AUG. 1969
Subject Category
Auxiliary Systems
Accession Number
70N12110
Funding Number(s)
CONTRACT_GRANT: NAS7-289
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available