NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Production of high purity silicon carbide PatentProducing high purity silicon carbide on carbon base by hydrogen reduction of silicon tetrachloride
Document ID
19700027489
Acquisition Source
Legacy CDMS
Document Type
Other - Other
Authors
Jewell, R. A. (NASA Langley Research Center Hampton, VA, United States)
Wakelyn, N. T. (NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 5, 2013
Publication Date
March 23, 1965
Subject Category
Physics, Solid-State
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-221637
Patent Number: NASA-CASE-XLA-00158
Patent Number: US-PATENT-3,174,827
Accession Number
70N36805
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-XLA-00158|US-PATENT-3,174,827
Patent Application
US-PATENT-APPL-SN-221637

Related Records

There are no records associated with this record.
No Preview Available