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The preparation and properties of vapor- deposited single-crystalline GaNVapor deposited GaN single crystals tested for electrical and optical properties, determining band gap energy, electron concentration, etc
Document ID
19700039572
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Maruska, H. P.
Tietjen, J. J.
Date Acquired
August 5, 2013
Publication Date
November 15, 1969
Subject Category
Physics, Solid-State
Accession Number
70A15688
Funding Number(s)
CONTRACT_GRANT: NAS12-538
Distribution Limits
Public
Copyright
Other

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