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Complementary MOS - Bipolar transistor structureBipolar n-p-n transistors fabrication to increase driving capabilities of complementary MOS transistors while retaining low power dissipation
Document ID
19700040303
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ho, J. C.
Iyer, R. R.
Kwong, K.
Lin, H. C.
Date Acquired
August 5, 2013
Publication Date
November 1, 1969
Subject Category
Electronic Equipment
Meeting Information
Meeting: INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS, ELECTRON DEVICES MEETING
Location: WASHINGTON, DC
Start Date: October 23, 1968
End Date: October 25, 1968
Sponsors: /INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS
Accession Number
70A16419
Funding Number(s)
CONTRACT_GRANT: NAS8-118
Distribution Limits
Public
Copyright
Other

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