NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Autodoping effects at the interface of GaAs-Ge heterojunctionsEpitaxial surface morphology layer electrical properties and autodoping at GaAs-Ge heterojunctions as function of substrate temperature, orientation and HCl concentration
Document ID
19700050276
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Feucht, D. L.
Ladd, G. O., Jr.
Date Acquired
August 5, 2013
Publication Date
March 1, 1970
Subject Category
Physics, Solid-State
Accession Number
70A26392
Funding Number(s)
CONTRACT_GRANT: AF 19/628/-5811
CONTRACT_GRANT: NGR-39-087-002
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available