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Dislocation mobility in heavily doped silicon single crystalsDopant effect on dislocation mobility in elastically loaded silicon crystal using internal friction and modulus defect measurements
Document ID
19700050278
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Carpenter, S. H.
Paddock, A. D.
Date Acquired
August 5, 2013
Publication Date
March 1, 1970
Subject Category
Physics, Solid-State
Accession Number
70A26394
Distribution Limits
Public
Copyright
Other

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