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One-electron and phonon-assisted tunneling in n-Ge Schottky barriersMetal-Ge n-type semiconductor tunnel junctions, discussing Sb and As doped units and conductance and barrier heights air cleavage effects
Document ID
19700054366
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Davis, L. C.
Steinrisser, F.
Date Acquired
August 5, 2013
Publication Date
January 15, 1970
Subject Category
Physics, Solid-State
Accession Number
70A30482
Funding Number(s)
CONTRACT_GRANT: DA-31-124-ARO/D/-114
CONTRACT_GRANT: NSG-228-62
CONTRACT_GRANT: DAAB07-67-C-0199
Distribution Limits
Public
Copyright
Other

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