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Study of second breakdown in power transistors using infrared techniquesInfrared thermal maps pinpoint exact location where second breakdown will occur before phenomenon happens and before physical damage develops at hot spot. Crystal structure analysis at that point determines cause of fault. Absolute power of radiation emitted from hot spot is direct indication of voltage level at which second breakdown occurs
Document ID
19710000021
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Date Acquired
August 6, 2013
Publication Date
January 1, 1971
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-20748
Report Number: MFS-20748
Accession Number
71B10021
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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