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Nonvolatile read/write memory element - A conceptBidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.
Document ID
19710000345
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Cricchi, J. R. (WESTINGHOUSE ELEC. CORP.)
Date Acquired
August 6, 2013
Publication Date
September 1, 1971
Subject Category
Electronic Components And Circuits
Report/Patent Number
GSC-10994
Report Number: GSC-10994
Accession Number
71B10347
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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