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A study of nitride devices for computer memory applicationsMetal-nitride-oxide-silicon /MNOS/ capacitors act like metal-nitride-silicon /MNS/ capacitors with extra interface where sheet of charge can be stored in slow states. Flatband voltage shifts over a wide range by adjusting store charge density.
Document ID
19710000348
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Raburn, W. D. (ALA. UNIV.)
Date Acquired
August 6, 2013
Publication Date
September 1, 1971
Subject Category
Physical Sciences
Report/Patent Number
MFS-20971
Report Number: MFS-20971
Accession Number
71B10350
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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