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Development of ion implantation techniques for microelectronicsIon implantation forming of conducting layers and p-n junctions in gallium arsenide and silicon carbide
Document ID
19710004054
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Dunlap, H. (Hughes Research Labs. Malibu, CA, United States)
Hart, R. (Hughes Research Labs. Malibu, CA, United States)
Hunsperger, R. G. (Hughes Research Labs. Malibu, CA, United States)
Marsh, O. J. (Hughes Research Labs. Malibu, CA, United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1970
Subject Category
Electronic Equipment
Report/Patent Number
NASA-CR-111806
Report Number: NASA-CR-111806
Accession Number
71N13529
Funding Number(s)
CONTRACT_GRANT: NAS12-124
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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