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A low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transitors Final engineering reportLow power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transistors
Document ID
19710008397
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
August 6, 2013
Publication Date
January 1, 1970
Subject Category
Electronics
Report/Patent Number
NASA-CR-116421
Report Number: NASA-CR-116421
Accession Number
71N17872
Funding Number(s)
CONTRACT_GRANT: NAS8-20812
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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