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Hall effect studies of irradiated Si/Li/ at cryogenic temperaturesCryogenic Hall measurements, electron damage, and room temperature recovery in irradiated float-zoned, lithium-doped silicon
Document ID
19710016755
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Stannard, J. (Naval Research Lab. Washington, DC, United States)
Date Acquired
August 6, 2013
Publication Date
April 1, 1971
Publication Information
Publication: JPL PROC. OF THE 3D ANN. CONF. ON EFFECTS OF LITHIUM DOPING ON SILICON SOLAR CELLS 1 APR. 1971
Subject Category
Auxiliary Systems
Accession Number
71N26231
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19710016750Collected WorksProceedings of the Third Annual Conference on Effects of Lithium Doping on Silicon Solar CellsCollected Works19710016750Collected WorksProceedings of the Third Annual Conference on Effects of Lithium Doping on Silicon Solar CellsN71-26226 14-03Collected Works
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