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Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere PatentWater content in vapor deposition atmosphere for forming n-type and p-type junctions of zinc doped gallium arsenide
Document ID
19710019680
Acquisition Source
Legacy CDMS
Document Type
Other - Other
Authors
Ellis, S. G. (Radio Corp. of America Princeton, NJ, United States)
Date Acquired
August 6, 2013
Publication Date
August 13, 1968
Subject Category
Physics, Solid-State
Report/Patent Number
Patent Number: NASA-CASE-XNP-01961
Patent Application Number: US-PATENT-APPL-SN-442835
Patent Number: US-PATENT-3,397,094
Accession Number
71N29156
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-XNP-01961|US-PATENT-3,397,094
Patent Application
US-PATENT-APPL-SN-442835

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