NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
Radiation effects in MOS integrated circuitsHigh energy electron irradiation effects on field effect transistors in integrated circuit devices
Document ID
19710024749
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Brashears, S. S. (Electro-Mechanical Research, Inc. College Park, MD, United States)
Thomsen, M. P. R. (Electro-Mechanical Research, Inc. College Park, MD, United States)
Date Acquired
August 6, 2013
Publication Date
October 1, 1970
Subject Category
Electronics
Report/Patent Number
NASA-CR-121623
REPT-6341-1994
Report Number: NASA-CR-121623
Report Number: REPT-6341-1994
Accession Number
71N34225
Funding Number(s)
CONTRACT_GRANT: NAS5-21106
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available