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The preparation and properties of vapor-grown In/1-x/Ga/x/PSingle crystal indium gallium phosphide p-n junction preparation by epitaxial vapor phase growth technique, determining energy gap dependence on alloy composition
Document ID
19710042424
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Clough, R. B.
Nuese, C. J.
Richman, D.
Date Acquired
August 6, 2013
Publication Date
March 1, 1971
Subject Category
Physics, Solid-State
Accession Number
71A23121
Distribution Limits
Public
Copyright
Other

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