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The effects of insulator surface-ion migration on MOS and bipolar integrated circuitsInsulator surface ion migration effects on MOS and bipolar integrated circuits, describing inversion voltage and surface conductivity and recombination velocities
Document ID
19710057808
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Keen, R. S.
Schlegel, E. S.
Schnable, G. L.
Date Acquired
August 6, 2013
Publication Date
January 1, 1971
Publication Information
Publisher: INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS, INC.,
Subject Category
Electronic Equipment
Meeting Information
Meeting: ANNUAL SYMPOSIUM ON RELIABILITY PHYSICS
Location: LAS VEGAS, NV
Start Date: April 7, 1970
End Date: April 10, 1970
Sponsors: IEEE
Accession Number
71A38505
Funding Number(s)
CONTRACT_GRANT: NAS12-544
Distribution Limits
Public
Copyright
Other

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