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Improved synthesis of intermetal compoundsMethod in crystal growth using liquid encapsulation techniques permits GaAs synthesis of materials from constituent elements whose vapor pressures are high at temperature at which they react spontaneously. Techniques may be useful for synthesis of GaP.
Document ID
19720000172
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Haggerty, J. S.
(Little /Arthur D./, Inc.)
Wenckus, J.
(Little /Arthur D./, Inc.)
Date Acquired
August 6, 2013
Publication Date
May 1, 1972
Subject Category
Materials
Report/Patent Number
HQN-10690
Report Number: HQN-10690
Accession Number
72B10172
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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