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Overlap diffusion for increasing phototransistor dynamic rangeConstruction of improved phototransistors to provide increased base-collector capacitance is described. Silicon or germanium semiconductor wafers are used as examples. Operation of transistors and electrical properties are discussed and illustrations of the devices are included.
Document ID
19720000346
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Mccann, D. H. (Westinghouse Elec. Corp.)
Date Acquired
August 6, 2013
Publication Date
July 1, 1972
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-20407
Report Number: MFS-20407
Accession Number
72B10347
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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