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Insulated-gate field-effect transistor strain sensorStrain sensors that can be switched on and off were fabricated from p-channel IGFET on thin filament n-type silicon crystals with silicon dioxide layer sputtered over transistor for passivation. Applications include integration with microelectronic circuits for multiplexing.
Document ID
19720000730
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Gross, C.
Date Acquired
August 6, 2013
Publication Date
December 1, 1972
Subject Category
Electronic Components And Circuits
Report/Patent Number
LAR-11012
Report Number: LAR-11012
Accession Number
72B10731
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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