Radiation tolerance of aluminum-doped silicon

Data are presented that indicate that heat-treated Czochralski-grown aluminum doped silicon that undergoes an appreciable resistivity increase during heating at approximately 450 C is significantly more resistant to both neutron and gamma irradiation than boron doped material (or aluminum doped material that either has not been heat treated or does not experience an appreciable resistivity change during such a treatment). Data interpretation is, however, quite difficult due to the occurrence of severe trapping effects in heat treated material.