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A fast algorithm for the calculation of junction capacitance and its application for impurity profile determinationA fast algorithm is described which calculates the space charge layer width and junction capacitance for an arbitrary impurity profile and for plane, cylindrical and spherical junctions. The algorithm is based on the abrupt space charge edge (ASCE) approximation. A method to use the algorithm for the determination of impurity profiles for two-sided junctions is presented. An expression is derived for the built-in voltage to be used for capacitance calculations with the ASCE approximation. Experimental evidence is given that the algorithm permits very accurate capacitance calculations and also predicts the exact temperature dependence of the junction capacitance.
Document ID
19720004492
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Deman, H. J. J.
(California Univ. Berkeley, CA, United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1971
Subject Category
Electronic Equipment
Report/Patent Number
NASA-CR-124672
Report Number: NASA-CR-124672
Accession Number
72N12141
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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