NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Due to the lapse in federal government funding, NASA is not updating this website. We sincerely regret this inconvenience.

Back to Results
The influence of degeneracy on the emitter efficiency of a bipolar transistorAn expression for the emitter efficiency is derived taking the degeneracy of the emitter into account. It is found that, even if there is no recombination of minority carriers in the emitter, degeneracy reduces the emitter efficiency. In addition this first order theory explains experimental results on temperature dependence of current gain and predicts an optimum emitter design for a fixed type of emitter profile.
Document ID
19720004493
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Deman, H. J. J. (California Univ. Berkeley, CA, United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1971
Subject Category
Electronic Equipment
Report/Patent Number
NASA-CR-124674
Report Number: NASA-CR-124674
Accession Number
72N12142
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available