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Development of reverse biased p-n junction electron emissionA cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.
Document ID
19720009509
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Fowler, P.
(National Research Corp. Cambridge, MA, United States)
Muly, E. C.
(National Research Corp. Cambridge, MA, United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1971
Subject Category
Electronic Equipment
Report/Patent Number
NASA-CR-111985
Report Number: NASA-CR-111985
Accession Number
72N17159
Funding Number(s)
CONTRACT_GRANT: NAS1-8223-3
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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