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Mg and Be ion implanted GaAs.Description of methods for generating desired Be and Mg ions and producing the electrical properties of p-type layers by implanting these ions in GaAs substrates. It is shown that the p-type layers thus produced have large hole concentrations and mobilities.
Document ID
19720039579
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.1661274
Authors
Hunsperger, R. G.
Wilson, R. G.
Jamba, D. M. (Hughes Research Laboratories Malibu, Calif., United States)
Date Acquired
August 6, 2013
Publication Date
March 1, 1972
Publication Information
Publication: Journal of Applied Physics
Volume: 43
Subject Category
Physics, Solid-State
Accession Number
72A23245
Distribution Limits
Public
Copyright
Other

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