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High power microstrip RF switches.Description of a microstrip-type single-pole double-throw switch, which uses only two PIN diodes, eliminates usual dc blocking capacitors, and has demonstrated an RF power handling capacity greater than 100 W CW at S-band. The insertion loss is less than 0.25 dB, and the input-to-off port isolation is greater than 36 dB over a bandwidth larger than 30 MHz.
Document ID
19720053591
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Choi, S. D.
Boreham, J. F.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1972
Subject Category
Electronic Equipment
Meeting Information
Meeting: International Microwave Symposium
Location: Arlington Heights, IL
Start Date: May 22, 1972
End Date: May 24, 1972
Accession Number
72A37257
Distribution Limits
Public
Copyright
Other

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