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P-channel silicone gate FETModified fabrication technique for P-channel MOSFET devices eliminates problems involving gate placement and gate overlap. Technique provides self-aligned gate, eliminating complexity of mask aligning. Devices produced by this process are considerably faster than conventional MOSFET's and process increases yield.
Document ID
19730000197
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Ostis, S. (Sperry Rand Corp.)
Woo, D. S. (Sperry Rand Corp.)
Date Acquired
August 7, 2013
Publication Date
June 1, 1973
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-22505
Report Number: MFS-22505
Accession Number
73B10197
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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