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PhototransistorA phototransistor is described in which there is included as a part of its integral structure an auxiliary diode in the form of an added base-collector junction. This junction is formed in the surface of the base element and thus out of the direct path between the emitter and collector regions of the phototransistor.
Document ID
19730010508
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Mccann, D. H. (Westinghouse Electric Corp. Huntsville, AL, United States)
Date Acquired
September 2, 2013
Publication Date
January 30, 1973
Subject Category
Electronic Equipment
Report/Patent Number
Patent Number: US-PATENT-3,714,526
Patent Number: NASA-CASE-MFS-20407
Patent Application Number: US-PATENT-APPL-SN-116777
Accession Number
73N19235
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-3,714,526|NASA-CASE-MFS-20407
Patent Application
US-PATENT-APPL-SN-116777

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