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Coaxial inverted geometry transistor having buried emitterThe invention relates to an inverted geometry transistor wherein the emitter is buried within the substrate. The transistor can be fabricated as a part of a monolithic integrated circuit and is particularly suited for use in applications where it is desired to employ low actuating voltages. The transistor may employ the same doping levels in the collector and emitter, so these connections can be reversed.
Document ID
19730023380
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Hruby, R. J. (Lockheed Missiles and Space Co. Sunnyvale, CA, United States)
Cress, S. B. (Lockheed Missiles and Space Co. Sunnyvale, CA, United States)
Dunn, W. R. (Lockheed Missiles and Space Co. Sunnyvale, CA, United States)
Date Acquired
September 2, 2013
Publication Date
September 18, 1973
Subject Category
Electronic Equipment
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-151412
Patent Number: NASA-CASE-ARC-10330-1
Patent Number: US-PATENT-3,760,239
Accession Number
73N32112
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-ARC-10330-1|US-PATENT-3,760,239
Patent Application
US-PATENT-APPL-SN-151412

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