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Thick film silicon growth techniquesThe research which was directed toward finding an improved die material is reported. Wetting experiments were conducted with various materials to determine their compatibility with silicon. Work has also continued toward the development of quartz as a die material as new techniques have provided more optimistic results than observed in the past. As a result of the thermal modification previously described, improvements in growth stability have contributed to an increase in ribbon quality.
Document ID
19740002580
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Bates, H. E.
(Tyco Labs., Inc. Waltham, MA, United States)
Mlavsky, A. I.
(Tyco Labs., Inc. Waltham, MA, United States)
Jewett, D. N.
(Tyco Labs., Inc. Waltham, MA, United States)
White, V. E.
(Tyco Labs., Inc. Waltham, MA, United States)
Date Acquired
September 3, 2013
Publication Date
August 31, 1973
Subject Category
Physics, Solid-State
Report/Patent Number
QPR-6
NASA-CR-135977
Report Number: QPR-6
Report Number: NASA-CR-135977
Accession Number
74N10693
Funding Number(s)
CONTRACT_GRANT: JPL-953365
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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