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The multiple junction edge illuminated solar cellThe multiple junction edge illuminated solar cell was devised for high voltage low current applications. Devices to be flight tested in early 1974 with 96 series connected PNN+ junctions in a 2 cm X 2.3 cm size deliver 36 volts at 1 milliampere. Test data of M-J cells fabricated with resistivities of 10, 50, 100, 200, 450, and 1000 ohm cm silicon are presented and problem areas are discussed. An additional potential application of the M-J cell lies in ultilization of its high intensity performance that has been demonstrated at levels in excess of 100 AMO suns.
Document ID
19740002834
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Sater, B. I.
(NASA Lewis Research Center Cleveland, OH, United States)
Brandhorst, H. W., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Riley, T. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 3, 2013
Publication Date
January 1, 1973
Subject Category
Auxiliary Systems
Report/Patent Number
NASA-TM-X-71476
E-7795
Report Number: NASA-TM-X-71476
Report Number: E-7795
Meeting Information
Meeting: Photovoltaic Specialists Conf.
Location: Palo Alto, CA
Country: United States
Start Date: November 13, 1973
End Date: November 15, 1973
Sponsors: IEEE
Accession Number
74N10947
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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