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High field CdS detector for infrared radiationAn infrared radiation detector including a cadmium sulfide platelet having a cathode formed on one of its ends and an anode formed on its other end is presented. The platelet is suitably doped such that stationary high-field domains are formed adjacent the cathode when based in the negative differential conductivity region. A negative potential is applied to the cathode such that a high-field domain is formed adjacent to the cathode. A potential measuring probe is located between the cathode and the anode at the edge of the high-field domain and means are provided for measuring the potential at the probe whereby this measurement is indicative of the infrared radiation striking the platelet.
Document ID
19740009975
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Tyagi, R. C. (NAS-NRC Hampton, VA, United States)
Robertson, J. B. (NASA Langley Research Center)
Boer, K. W. (Univ. of Delaware)
Hadley, H. C., Jr. (Univ. of Delaware)
Date Acquired
September 3, 2013
Publication Date
February 5, 1974
Subject Category
General
Report/Patent Number
Patent Number: NASA-CASE-LAR-11027-1
Patent Application Number: US-PATENT-APPL-SN-275118
Patent Number: US-PATENT-3,790,795
Accession Number
74N18088
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-LAR-11027-1|US-PATENT-3,790,795
Patent Application
US-PATENT-APPL-SN-275118

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