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Thick film silicon growth techniquesOne inch wide silicon ribbons up to 14 inches long have been produced from graphite dies. Several different techniques have been employed to improve the semiconductor purity of silicon. This has resulted in a general increase in quality although the techniques involved have not been optimized. The power factor of uncoated ribbon solar cells produced for material evaluation has increased to approximately 75% of those evaluation cells made from commercial silicon. The present limitation is believed due to low lifetime. Additional work has continued with new die materials; however, only composite dies of SiO2 and C show significant potential at this time.
Document ID
19740022097
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Bates, H. E.
(Tyco Labs., Inc. Waltham, MA, United States)
Jewett, D. N.
(Tyco Labs., Inc. Waltham, MA, United States)
Mlavsky, A. I.
(Tyco Labs., Inc. Waltham, MA, United States)
White, V. E.
(Tyco Labs., Inc. Waltham, MA, United States)
Date Acquired
September 3, 2013
Publication Date
February 28, 1974
Subject Category
Physics, Solid-State
Report/Patent Number
QPR-8
NASA-CR-139301
Report Number: QPR-8
Report Number: NASA-CR-139301
Accession Number
74N30210
Funding Number(s)
CONTRACT_GRANT: JPL-953365
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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