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Schottky barrier solar cell promises improved efficiencyHigher current and higher voltage can be obtained by using Schottky barrier device with wide band-gap semiconductor as top layer and lower band-gap semiconductor underneath. Significant amount of solar radiation that is not absorbed by side band-gap material will be absorbed by narrow band-gap material.
Document ID
19750000125
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Stirn, R. J.
Date Acquired
August 8, 2013
Publication Date
June 1, 1975
Subject Category
Physical Sciences
Report/Patent Number
NPO-13482
Report Number: NPO-13482
Accession Number
75B10125
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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